GT100N12 N-Channel Enhancement Mode Power MOSFET
■The GT100N12 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
●General Features
■VDS: 120V
■ID (at VGS = 10V): 70A
■RDS(ON) (at VGS = 10V): < 10mΩ
■100% Avalanche Tested
■RoHS Compliant
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Datasheet |
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Please see the document for details |
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TO-263;TO-220 |
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English Chinese Chinese and English Japanese |
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2022/6/10 |
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839 KB |
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