GT1003A Trench Mosfet
■The GT1003A uses advanced trench technology and design to provide excellent R-DS(ON) with low gate charge. This device is suitable for use in high frequency Synchronous-recification application.
●General Features
■V-DSS: 100V
■R-DS(ON) @ 10V(typ): 110mΩ
■I-D: 3A
■High density cell design for ultra low Rdson
■Lead free product isacquired
■Excellent package for good heat dissipation
■RoHS Compliant
|
[ Consumer electronic power supply ][ Isolated DC/DC converter ][ Motor control ][ high frequency Synchronous-recification application ] |
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
SOT-23-3L |
|
|
English Chinese Chinese and English Japanese |
|
|
2021/9/14 |
|
|
|
|
|
|
|
|
622 KB |
- +1 Like
- Add to Favorites
Recommend
- GOFORD MOSFET in PD Application----Analysis of MCDODO 30W PD Product
- Vincotech‘s fastPACK 0 MOS and fastPACK 1 MOS Modules Featuring Cost-effective H-bridge Topology with MOSFETs
- The Differences between MOS Tube and IGBT Tube
- MOS Switch Tube Selection and Principle Application
- What is the Difference between MOS tube and IGBT?
- SOT-23 P-channel MOS BSS84 : Cost Effective Solutions for Low-voltage Applications Requiring a Low-current High-side Switch
- Miller Effect on MOS Tube Switches
- MOS’s Definition and Classification
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
