GT100N12 N-Channel Enhancement Mode Power MOSFET
■The GT100N12 uses advanced trench technology to provide excellent R-DS(ON), low gate charge. It can be used in a wide variety of applications.
●General Features
■V-DS: 120V
■I-D (at V-GS= 10V): 70A
■R-DS(ON) (at V-GS= 10V): < 10mΩ
■100% Avalanche Tested
■RoHS Compliant
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[ SMPS ][ LED Driver ][ UPS ][ Motor Control ][ BMS ][ High Frequency Circuit ] |
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Datasheet |
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Please see the document for details |
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TO-220;TO-263 |
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English Chinese Chinese and English Japanese |
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2020/10/14 |
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835 KB |
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