GT100N04D3 N-Channel Enhancement Mode Power MOSFET

2024-07-05
●Description ■The GT100N04D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. ●General Features ■VDS 40V ■ID (at VGS = 10V) 13A ■RDS(ON) (at VGS = 10V) < 10mΩ ■RDS(ON) (at VGS = 4.5V) < 16mΩ ■100% Avalanche Tested ■RoHS Compliant

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GT100N04D3

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N-Channel Enhancement Mode Power MOSFET

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Power switch ]DC/DC converters ]

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Datasheet

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DFN3X3-8L

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2022/9/23

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