100V/15A N-Channel Enhancement Mode Power MOSFET CM15N10AU with High Cell Density and High Voltage Planar Technology
The APM CM15N10AU is the N-Channel enhancement mode power field effect transistors with high cell density, and high voltage planar technology. This high-density process and design have been optimized for switching performance and especially tailored to minimize on-state resistance.
CM15N10AU N-Channel Enhancement Mode Power MOSFET Features
VDS: 100V
ID: 15A
RDSON (@VGS=10V) : <110mΩ
RDSON (@VGS=4.5V) : <120mΩ
High-density cell design for extremely low RDSON
Excellent on-resistance and DC current capability
Applications
AC/DC load switch
SMPS
Notebooks and Handhelds adapter
UPS Power
Absolute Maximum Ratings (Tc=25℃ unless otherwise noted）
Electrical Characteristics (Tc=25℃ unless otherwise noted)
Noted:
(1) Pulse Test: Pulse Width≤300us, Duty cycle≤2%.
(2) Pulse width limited by maximum junction temperature
(3) Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. With 2oz Copper, t≤10s
Ordering Information
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