500V/18A N-Channel Power MOSFET CM18N50BTP/F with High Cell Density and High Voltage Planar Technology
The CM18N50BTP/F is the N-Channel enhancement mode power field effect transistors with high cell density, high voltage planar technology. This high density process and design have been optimized switching performance and especially tailored to minimize on-state resistance.
Features
VDS: 500V
ID (@VGS=10V): 18A
RDSON (@VGS=10V) : < 0.33Ω
High density cell design for extremely low RDSON
Excellent on-resistance and DC current capability
Applications
AC/DC load switch
SMPS
LED power
Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)
Electrical Characteristics (Tc=25℃ unless otherwise noted)
Noted:
(1) Pulse Test: Pulse Width≤300μs, Duty cycle ≤2%
(2) Pulse width limited by maximum junction temperature
(3) Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. With 2oz Copper, t≤10s
(4) Drain current limited by maximum junction temperature
The N-Channel Power MOSFET Ordering Information
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