CM180N10AGB N-Channel 100V (D-S) Power MOSFET
■The CM180N10AGB is the N-Channel enhancement mode power field effect transistors with high cell density, trench technology. This high density process and design have been optimized switching performance and especially tailored to minimize on-state resistance.
●Features
■VDS: 100V
■ID (@VGS=10V): 228A
■RDSON (@VGS=10V) : < 2.6mΩ
■High density cell design for extremely low RDSON
■Excellent on-resistance and DC current capability
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N-Channel 100V (D-S) Power MOSFET 、 N-Channel enhancement mode power field effect transistors |
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[ AC/DC load switch ][ SMPS ][ Notebooks ][ Handhelds adapter ][ UPS Power ] |
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Datasheet |
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Please see the document for details |
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TO-263 |
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English Chinese Chinese and English Japanese |
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2023/11/17 |
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Revision_1.0 |
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1.3 MB |
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