-30V/-72A P-Channel Power MOSFET CMP3009TF5 for Battery management, Power management and Load switch

2024-01-16 APM
P-Channel Power MOSFET,P-Channel enhancement mode power field effect transistors,CMP3009TF5

The CMP3009TF5 P-Channel Power MOSFET is the P-Channel enhancement mode power field effect transistors with high cell density, trench technology. This high-density process and design have been optimized for switching performance and especially tailored to minimize on-state resistance.



Features 

VDS: -30V 

ID: -72A 

RDSON (@VGS=-10V) : <7.0mΩ

RDSON (@VGS=-4.5V) : <11.4mΩ 

High-density cell design for extremely low RDSON 

Excellent on-resistance and DC capability  


Applications 

Battery management 

Power management 

Load switch


Absolute Maximum Ratings (TA=25℃ unless otherwise noted)


Electrical Characteristics (TJ=25℃ unless otherwise noted)

Noted: 

(1) Pulse Test: Pulse Width≤300μs, Duty cycle ≤2%.  

(2) The value of RθJA is measured with the device mounted on a lin2 FR-4 board with 2oz. Copper, in a still air environment with TA=25℃. The  Power dissipation PDSM is based on RθJA t≤10s and the maximum allowed junction temperature of 150°C. The value of any given application depends on the user's specific board design.   

(3) Single pulse width limited by junction temperature TJ(MAX)=150℃.  

(4) The power dissipation PD is based on TJ(MAX) =150℃, using junction-to-case thermal resistance, and is more useful in setting the upper Dissipation limit for cases where additional heatsinking is used. 

(5) The RθJA is the sum of the thermal impedance from junction to case RθJA and case to ambient. 

(6) Drain current limited by maximum junction temperature.


Ordering Information


Marking Information

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