15N10 N-Channel Enhancement Mode MOSFET
■ The 15N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gat e charge. It can be used in a wide variety of applications
●General Features
■VDS =100V,ID =15A
■RDS(ON) <112mΩ @ VGS=10V
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[ Power switch ][ DC/DC converters ] |
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Datasheet |
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Please see the document for details |
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TO252-2L |
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English Chinese Chinese and English Japanese |
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2023/3/16 |
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3.5 MB |
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