Hi-semicon‘s 10A/700V N-Channel Enhancement Mode Power MOSFET SFX10N70-Y for PFC, SMPS,UPS and LED Lighting Power
These N-Channel enhancement mode power field effect transistors SFX10N70-Y are produced using HI-SEMICON's proprietary, planar stripe, DMOS technology.
These N-Channel enhancement mode power MOSFET SFX10N70-Y are well suited for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology.
Features
VDS(V)=700V, ID=10A
RDS(ON)
TYP:1.03Ω@VGS=10V ID=5.0A
MAX:1.15Ω
Applications
Power faction correction (PFC)
Switched mode power supplies (SMPS)
Uninterruptible power supply (UPS)
LED lighting power
ABSOLUTE MAXIMUM RATINGS (TJ=25℃unless otherwise noted)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
1.Pulse width limited by maximum junction temperature
2.L=30mH, IAS=3.3A, VDD=100V, VG=10V, RG=25Ω, starting TJ=25℃
3.Pulse Test: Pulse width≤300μs, Duty cycle≤2%
4. Essentially independent of operating temperature
ORDERING INFORMATION
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