Hi-semicon‘s 3A/500V N-Channel Enhancement Mode Power MOSFET SFF3N50TS and SFD3N50TS
These N-Channel enhancement mode power field effect transistors are produced using HI-SEMICON's proprietary, planar stripe, VDMOS technology.
Features
◆VDS(V)=500V, ID=3A
◆RDS(ON)
TYP:3.5Ω@VGS=10V ID=1.5A
MAX:3.8Ω
Applications
◆Power faction correction (PFC)
◆Switched mode power supplies (SMPS)
◆Uninterruptible power supply (UPS)
◆LED lighting power
ABSOLUTE MAXIMUM RATINGS (TJ=25℃ unless otherwise noted)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
1.Pluse width limited by maximum junction temperature
2.L=40mH, IAS=3A, VDD=50V, VG=10V, RG=25Ω, starting TJ=25℃
3.Pulse Test: Pulse width ≤300μs, Duty cycle≤2%
4.Essentially independent of operating temperature
ORDERING INFORMATION
- +1 Like
- Add to Favorites
Recommend
- Hi-semicon‘s 5A/500V N-Channel Enhancement Mode Power MOSFET SFX5N50.H for PFC, SMPS,UPS and LED Lighting Power
- Hi-semicon‘s 10A/700V N-Channel Enhancement Mode Power MOSFET SFX10N70-Y for PFC, SMPS,UPS and LED Lighting Power
- MOS Tube and Simple CMOS Logic Level Circuit
- To Prevent MOS Tube from Burning, We Need to Know Why it Burns First
- The Popular Science, Why is the Channel Clipped in the Saturation Area of MOS Tube and the Current?
- Two kinds of structure of unit in SiC power MOSFET: plane structure and groove structure
- Solve the mystery of MOS tube damage
- MOS Tube H Bridge Motor Drive Circuit Diagram
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
