GT1003D N-Channel Enhancement Mode Power MOSFET
■The GT1003D uses advanced trench technology to provide excellent R-DS(ON), low gate charge. It can be used in a wide variety of applications.
●General Features
■V-DS: 100V
■I-D (at V-GS= 10V): 3A
■R-DS(ON) (at V-GS= 10V): < 130mΩ
■R-DS(ON) (at V-GS= 4.5V): < 150mΩ
■100% Avalanche Tested
■RoHS Compliant
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[ Power switch ][ DC/DC converters ][ Synchronous Rectification ] |
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Datasheet |
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Please see the document for details |
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SOT-23-3L |
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English Chinese Chinese and English Japanese |
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2021/9/14 |
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719 KB |
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