PCNA2102:Alternate Wafer Fabrication Sitefor Innoscience all Devices
■Innoscience(INNO)is announcing theaddition of theInnoscience(SuZhou)siteas an alternate wafer fabrication site ofInnoscience all device.The change will not impact the form, fit, and function of the product. Product datasheet and package specifications remain the same.
●Reason for change:
■This change is being implemented to improve manufacturing efficiency and to better support longterm demand for the affected products.
●Products affected:
■All devices currently in production and all future devices
|
|
|
|
PCN/EOL |
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
English Chinese Chinese and English Japanese |
|
2021/07/22 |
|
1.0 |
|
PCNA2102 |
|
467 KB |
- +1 Like
- Add to Favorites
Recommend
- Innoscience’s BiGaN technology leads the way toward breakthrough GaN applications for smartphones
- Innoscience Shipments of InnoGaN Chips Exceed 300 Million Pieces
- Innoscience to Demonstrate that GaN is The Best Power Solution for An Increasingly Wide Variety of Applications at PCIM 2023
- Innoscience Built The First World-class 8-inch Wafer FAB with Gold-free and CMOS Compatible Process
- World‘s Largest Dedicated 8-inch GaN-on-Si FET Producer Innoscience Opens Locations in the USA and Europe Offering Lowest Prices and Wide Availability
- Innoscience Unveils 140W Power Supply Design Using High- and Low-voltage GaN HEMT to Deliver Class-leading Power Density and Efficiency
- Innoscience‘s Bi-GaN bi-directional GaN HEMTs used inside smartphones save space, increase efficiency and lower temperature rise
- Innoscience and University of Bern Develop Multilevel Topology Reference Demo to Address 850VDC Applications With 650V GAN Fulfilling EV and Industrial Requirements
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.