Innoscience Unveils 140W Power Supply Design Using High- and Low-voltage GaN HEMT to Deliver Class-leading Power Density and Efficiency
Founded in December 2015, Innoscience is the only IDM company in the world that can mass-produce both high- and low-voltage GaN devices. Innoscience has its own normally-off, single-die technology and has industry's largest 8in wafer GaN-on-Si production capacity. In the consumer market, fast charging products have led the adoption of GaN technology. More than 2% efficiency gains achieved by using GaN everywhere in the design; Only Innoscience can mass-produce both high- and low-voltage 8-inch GaN-on-Si devices.
Tuesday, March 22, 2022 – Innoscience Technology, the company founded to create a global energy ecosystem based on high performance, low-cost gallium nitride on silicon (GaN-on-Si) power solutions, today announced a new ultra-high-density 140W power supply demo that uses the company's high- and low-voltage GaN HEMT devices to achieve efficiencies of over 95% (230VAC; 5V/28A). Measuring just 60x60x22mm (2.4x2.4x0.9in) the PSU has a class-leading power density of 1.76W/cm3 (29W/in3).
Dr. Denis Marcon, General Manager of Innoscience Europe and Marketing Manager for the USA and Europe, explained: "By using GaN switches for both the high- and low-voltage functions on this design, we are maximizing efficiency rather than compromising it with lossy silicon devices. This is possible thanks to Innoscience's cost-effective and high-volume manufacturing processes and capabilities."
The 140W 300kHz AC/DC adapter uses a CRM Totem Pole PFC + AHB topology. It features Innoscience's INN650DA140A, a 650V /140mΩ GaN HEMT in the 5x6mm DFN package, for switches S1 and S2, the 650V/240mΩ, 8x8mm DFN-packaged INN650D240A for S3, and the INN650DA240A, a 5x6mm DFN 650V/240mΩ device for S4. S5 and S6 are delivered by the INN150LA070A, a 150V/7mΩ, 2.2x3.2mm LGA part within Innoscience's low-voltage GaN HEMT range.
Yi Sun, General Manager of Innoscience America and Sr VP of Product and Engineering adds: "This design, which targets USB PD3.1 notebooks and power tools, is a full 2% more efficient than silicon designs; this proves what can be achieved if GaN FETs are used everywhere, even in a relatively simple design."
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