650V GaN Enhancement-mode Power Transistor INN650D140A,Ultra-high Switching Frequency
The Innoscience 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead package (DFN) with 8 mm × 8mm size.
Fig.1
Features
● Enhancement mode transistor-Normally off power switch
●Ultra-high switching frequency
●No reverse-recovery charge
●Low gate charge, low output charge
●Qualified for industrial applications according to JEDEC Standards
●ESD safeguard
●RoHS, Pb-free, REACH-compliant
Key performance parameters
Table.1 Key performance parameters at Tj = 25 °C
Applications
●AC-DC converters
●DC-DC converters
●Totem pole PFC
●Fast battery charging
● High-density power conversion
●High-efficiency power conversion
Package outlines
Fig.2
Ordering information
Table.2
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