World’s Largest 8-inch GaN-on-Si IDM to Debut at Electronica with New Parts, New Demos and Keynote Presentations
Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, low-cost gallium-nitride-on-silicon (GaN-on-Si) power solutions, played a full and active role at the upcoming Electronica exhibition.
Denis Marcon General Manager, Europe, at Innoscience took part in two forum discussions:
Power Electronic Forum, 11:50 am, Wednesday, November 16th, Stand A4.473: "How to take advantage of GaN power device performance."
Markt&Technik Panel, 1:00 pm, Wednesday, November 16th, Stand C3.557 (WEKA): "Gallium Nitride - Beyond consumer electronics."
Visitors to the Innoscience booth (C3.440) were able to discuss with the team the performance and applications of Low Voltage (30V-150V) GaN power devices such as the newly introduced JEDEC-qualified INN100W032A rated for 100V and featuring a low typical RDS(on) of just 2.4mΩ in a Solder Bar WLCSP package of just 3.5mm x 2.13mm package size. Innoscience also showed a demo of a 2.4kW, 48-12V bi-directional Buck-Boost converter for mild hybrid EVs (MHEV) and industrial applications based on the INN100W032A. Additionally, Innoscience demonstrated a 150W Buck-Boost converter utilizing a 40V InnoGaN™ power device. This demonstrated Innoscience solution size and performance benefits to power the next-generation USB-C, PD3.1 designs for battery-powered equipment and docking stations.
Moreover, Innoscience showcased its bidirectional (BiGaN™) power device which is the first GaN device to enter the mobile phone into the battery management system of the OPPO's smartphone.
Next to this, Innoscience's team also presented the High Voltage (650V) power GaN device portfolio with a wide range of on-resistances to satisfy a variety of power converter applications. Particularly, Innoscience introduced the new JEDEC-qualified 650V GaN HEMT INN650D080BS with a typical RDS(on) of 60mΩ in a standard 8x8 DFN package. Such InnoGaN™ has been used in the collaboration between Innoscience and KU Leuven/Energie Ville in Belgium to develop a 400V dual active bridge (DAB) converter with power exceeding 1kW.
The same device has been used in another collaboration between Innoscience and BFH institute in Switzerland to realize a multi-level 800V converter.
Finally, Innoscience presented several demos that display the performance of its extensive range of High Voltage GaN HEMTs. Highlights included a compact 300W PFC + LLC PD power supply based on the INN650D140A. Explains Innoscience's Senior Business Development Manager, Christiam Gasparini: "This is a very compact and high-efficiency platform for many products including consumer appliances through to industrial, computing, USB-C Power Delivery, medical, and gaming, to name a few."
Denis Marcon General Manager, Europe, at Innoscience commented: "We are excited to be at Electronica, the largest electronics event in the Western world, for the first time. We have both very competitive LV and HV GaN HEMTs available now in mass production and technical support teams in place to ensure that customers can take advantage of the benefits of GaN and leapfrog their competitors."
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