Innoscience Built The First World-class 8-inch Wafer FAB with Gold-free and CMOS Compatible Process

2021-06-29 Innoscience
8-inch Wafer FAB,GaN-on-Si IDM,8-Inch,8-inch Wafer FAB

Innoscience has a world-leading 8-inch GaN-on-Si industrialization platform, which provides proven capabilities of GaN epitaxial growth, gold-free and CMOS compatible process, as well as reliability testing and failure analysis.


Nanoscience has also established strategic partnerships with top universities, research institutions, and enterprises.


8-Inch GaN-on-Si IDM

The company built the first world-class 8-inch Wafer FAB in China with gold-free and CMOS compatible processes, including photolithography, thin-film growth, etching, diffusion, testing, and other areas.



GaN-on-Si Epitaxy

Innoscience owns several world-leading MOCVD equipments for the industrialization of 8-inch GaN-on-Si epitaxy. Through its own patented technology, Innoscience has solved the problems in the 8-inch GaN-on-Si epitaxial growth, including lattice mismatch, thickness uniformity, and thick film growth applied in 650V products.



Reliability Testing and Failure Analysis Laboratories

Innoscience owns the industry-leading reliability testing and failure analysis laboratories.

● Reliability Testing Laboratory: It has wafer-level, packaging-level, and system-level testing capabilities. Testing equipment includes Keysight, probe station, HAST, TC, HTGB, HTRB, THB, etc.

● Failure Analysis Laboratory: It has electrical, chemical, and physical analysis capabilities. Analytical equipment includes EMMI/OBIRCH,  FIB, high-precision SEM, AFM, grinding machine, etc.



Strategic Partners

Innoscience has established strategic partnerships with research institutions and universities at home and abroad such as Interuniversity Microelectronics Center (IMEC), Hong Kong University of Science and Technology, and University of Electronic Science and Technology to cooperate in the fields of GaN epitaxial growth, manufacture, reliability, and GaN devices as well as an integrated circuit.


For GaN power devices, Innoscience and JCET have jointly developed in the fields of wafer-level packaging, QFN plastic packaging, and chip testing. JCET is the largest packaging and testing enterprise in China.

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