JieJie Microelectronics launched its 150V SGT MOSFET to Boost Applications in 5G Communication, BLDC, BMS, etc.
JieJie Microelectronics launched its new 150V series N-channel JSFET® packaged with TO-220-3L, TO-247-3L, and TO-263-3L, of which the excellent thermal conductivity helps reduce hot spots and improve reliability; this series is designed to meet the requirements of such applications as 5G communication power supply, active Ethernet (PoE++) supply-side power supply, energy storage battery pack power management (BMS) optimizer and brushless motor drive (BLDC) for ultra-high power density and energy efficiency. The device is equipped with an all-copper frame inside and can handle 185A current. When VGS=10V, the TO-263-3L packaged JMSH1504AE's standard impedance is as low as 3.9mΩ, which is comparable to similar products of international leading semiconductor IDM manufacturers.
The new JMSH1504 series of power devices are available in plug-in and SMD packages, which facilitate PCB layout design and placement of electronic components. When compared with comparable competitors in the TO-263 package, this series has great advantages in parameters such as on-impedance, avalanche energy, Miller effect, and output capacitance; moreover, it is designed with favorable linear model/safe operation area (SOA) features, which guarantee it functions safely and reliably at high currents. Fan Jun, Marketing Manager of Power MOSFET Devices at JieJie Microelectronics: "In response to China's big push for 5G infrastructure, more and more intelligent terminals like high-precision positioning modules and portrait recognition sensors are connected to RAN switches via Gigabit Ethernet for signal transmission; besides, they are provided with up to IEEE 802.3bt PoE++ level IV 100W power supply from the PSE power supply equipment module of switch. The ultra-low on-impedance (3.9mΩ) of JMSH1504AE ensures the PSE power supply equipment module in switch guarantees the optimum power conversion efficiency and operating temperature during power supply to up to 24 sets of PoE++ PD terminals."
JMSH1504 series SGT MOSFET meets the requirements of applications in communication, BMS, and BLDC for device robustness and reliability. It is often used in applications such as OR-ing and hot swap for data centers, 5G data switches and security system servers. The extremely low Miller capacitance (6.7pF) and output capacitance (772pF) and the avalanche energy up to 889mJ (EAS) make it possible to conveniently handle the spike voltage that often occurs when the power supply shuts down in high-to-low level subsystems, thereby ensuring long-term stable system operation.
The JMSH1504 series SGT MOSFET is in mass production, and samples are available from JieJie Microelectronics' Sales Department, contract agents, or related business channels.
- 【Datasheet】JMSH1504AC JMSH1504AE 150V 3.9mΩ N-Ch Power MOSFET
- 【Datasheet】JMSH1504AC JMSH1504AE 150V 3.9mΩ N-Ch Power MOSFET
- 【Datasheet】JMSH1504AC JMSH1504AE 150V 3.9mΩ N-Ch Power MOSFET
- 【Datasheet】JMSH1504AC JMSH1504AE 150V 3.9mΩ N-Ch Power MOSFET
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