PANJIT Gen.2 SGT MOSFET(100V) Honored as “Best Power IC” at EE Award Asia 2022
AspenCore, the publisher of EE Times Taiwan/Asia and EDN Taiwan/Asia, held EE Awards Asia 2022 on December 8th. The Awards featured five categories—Company Award, Product Award, People Award, Startup Award, and Spotlight Award—for a total of 22 awards.
PANJIT is honored to receive the “Best Power IC of the Year” for PANJIT Gen.2 SGT MOSFET (100V).
Gen.2 SGT MOSFET (100V) is targeted to provide efficient design solutions for DC-DC converter topologies. Different from Gen. 1 SGT MOSFET, PANJIT applied new know-how on their second-generation SGT MOSFET wafer, which enables us to generate the lowest gate charge and RDSON in the industry, creating excellent FOM to optimize various topology efficiency. Furthermore, as this series comes in various package types and due to the product characteristic, DC-DC converter systems that require low FOM and high voltage MOSFETs, such as industrial power, and telecom power are also suitable to use PANJIT’s GEN. 2 SGT MOSFET (100V).
PANJIT Gen.2 SGT MOSFET honored as “Best Power IC” at EE Award Asia 2022
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