NV6127 650V GaNFast™ Power IC
■GaNFast™ Power IC
▲Thermally-enhanced version of NV6117
▲Large cooling pad
▲Enhanced thermals when using CS resistor
▲Monolithically-integrated gate drive
▲Wide VCCrange (10 to 30 V)
▲Programmable turn-on dV/dt
▲200 V/ns dV/dt immunity
▲800 V Transient Voltage Rating
▲650V Continuous Voltage Rating
▲Low 125mΩresistance
▲Zero reverse recovery charge
▲ESD protection –1kV (HBM), 1 kV (CDM)
▲2 MHz operation
■Small, low-profile SMT QFN
▲6 x 8 mm footprint, 0.85 mm profile
▲Minimized package inductance
■Sustainability
▲RoHS, Pb-free, REACH-compliant
▲Up to 40% energy savings vs Si solutions
▲System level 4kg CO2Carbon Footprint reduction
■Product Reliability
▲20-year limited product warranty (see Section 14 for details)
●Description
■The NV6127 is a thermally-enhanced version of the popular NV6117650V GaNFast™ power IC, optimized for high-frequency and soft-switching topologies.
■Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital in, power out’ high performance powertrain building block, enabling designers to create the fastest, smallest, most efficient integrated powertrain in the world.
■The highest dV/dt immunity, high-speed integrated drive and industry standard low-profile, low-inductance, 6 x8 mm SMT QFN package allow designers to exploit Navitas GaN technology with simple, quick, dependable solutions for breakthrough power density and efficiency.
■Navitas’ GaNFast™ power ICs extend the capabilities of traditional topologies such as flyback, half-bridge, resonant, etc. to MHz+ and enable the commercial introduction of breakthrough designs.
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[ AC-DC ][ DC-DC ][ DC-AC ][ Wireless power ][ Solar Micro-inverters ][ LED lighting ][ TV SMPS ][ Server ][ Telecom ] |
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Datasheet |
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Please see the document for details |
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QFN |
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English Chinese Chinese and English Japanese |
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Apr. 11, 2022 |
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Rev Apr. 11, 2022 |
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1.7 MB |
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