Intel Capital investments in Vergiga semiconductor， which round of financing continues to be used for the core capabilities of semiconductor design companies
Intel Capital recently invested in Shenzhen Vergiga Semiconductor Co., LTD. (hereafter referred to as "VGSEMI"), a Chinese power semiconductor chip design company.
Previously, Vergiga Semiconductor has obtained strategic investment from OPPO, Xiaomi, Huaqin Telecom Technology, Yuanhe Puhua, Dynamic balance, and other industrial and professional institutions, and in July 2021, it was recognized as a national specialized and special new "little Giant" enterprise. It is reported that the capital invested by Intel Capital will continue to be used for the core capabilities of The four semiconductor design companies, namely, Semiconductor R&D technology, supply chain technology, quality management, and technology marketing, as well as for the introduction of high-end talents and hardware facilities.
VGSEMI is a high-tech enterprise specializing in the development, sales, and application of power devices and integrated circuit products. Since its establishment, VGSEMI has always focused on power MOSFET, IGBT products, and application research, and has rich experience in power device technology and chip design, and mass production. Moreover, it is one of the few domestic companies that successfully develop power separation devices on 12-inch wafers. The comprehensive performance of many products has reached the level of international first-line manufacturers, and the products are widely used in consumer electronics, communications, computing power, industrial control, new energy vehicles, and other fields.
In the past ten years of technology and market accumulation, Through continuous improvement of R&D technology, supply chain technology integration, quality management, technology marketing, and other core capabilities, has become one of the preferred brands in multiple segments. As wei signs in the semiconductor car level gauge product development and rules of the construction of the quality management system continuously upgrade, the Fairchild will with more excellent comprehensive competitiveness global high-quality services to our clients and high-end silicon-based power device and will continue to put into product research and development input, at the same time, the layout of the third generation power semiconductor product technology development, commercial, industrial, automotive electronics and other fields to achieve full coverage of power device.
- +1 Like
- Add to Favorites
Recommend
- Failure Modes of Power MOSFET in Photovoltaic Optimizer
- Excellent Power MOSFET SL90N03R Built with Advanced Trench Technology
- Shindengen Announces 4 New Models of EETMOS4 of Power MOSFET Based on AEC-Q101
- Diotec‘s Power MOSFET DI100N10PQ in E-Bike Drives Offers Low losses and Longer Battery Life
- Vincotech‘s fastPACK 0 MOS and fastPACK 1 MOS Modules Featuring Cost-effective H-bridge Topology with MOSFETs
- -40V/-5A Power MOSFET BLM80P04, Using Advanced Trench Technology and Design to Provide Excellent RDS(ON) with Low Gate Charge
- The Differences between MOS Tube and IGBT Tube
- SL15N65CD: a Power MOSFET Produced Using Slkor‘s Advanced Superjunction MOSFET Technology
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
