MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ OptiMOS™ Power-MOSFET, 30 V IPT004N03L
●Description
■Features
▲Optimized for e-fuse and ORing application
▲Very low on-resistance RDS(on) @ VGS=4.5 V
▲100% avalanche tested
▲Superior thermal resistance
▲N-channel
▲Qualified according to JEDEC for target applications
▲Pb-free lead plating; RoHS compliant
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Power-MOSFET 、 Metal Oxide Semiconductor Field Effect Transistor 、 MOSFET |
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Datasheet |
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Please see the document for details |
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PG-HSOF-8-1 |
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English Chinese Chinese and English Japanese |
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2014-10-08 |
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Rev. 2.0 |
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1.5 MB |
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