NV6113 GaNFast™ Power IC
▲GaNFast™ Power IC
■Monolithically-integrated gate drive
■Wide logic input range range with hysteresis
■5 V / 15 V input-compatible
■Wide VCC range (10 to 30 V)
■Programmable turn-on dV/dt
■200 V/ns dV/dt immunity
■800 V Transient Voltage Rating
■650V Continuous Voltage Rating
■Low 300mΩresistance
■Zero reverse recovery charge
■ESD protection –2 kV (HBM), 1 kV (CDM)
■2 MHz operation
▲Small, low-profile SMT QFN
■6 x 8 mm footprint, 0.85 mm profile
■Minimized package inductance
▲Sustainability
■RoHS, Pb-free, REACH-compliant
■Up to 40% energy savings vs Si solutions
■System level 4kg CO2Carbon Footprint reduction
▲Product Reliability
■20-year limited product warranty (see Section 14 for details)
●Description
▲This GaNFast power IC is optimized for high frequency, soft-switching topologies.
▲Monolithic integration of FET, drive and logic creates an easy-to-use ‘digital-in, power-out’ high-performance powertrain building block, enabling designers to create the fastest, smallest, most efficient power converters in the world.
▲The highest dV/dt immunity, high-speed integrated drive and industry-standard low-profile, low-inductance, 5x6mm SMT QFN package allow designers to exploit Navitas GaN technology with simple, quick, dependable solutions for breakthrough power density and efficiency.
▲GaNFast power ICs extend the capabilities of traditional topologies such as flyback, half-bridge, resonant, etc. to MHz+ and enable the commercial introduction of breakthrough designs
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[ AC-DC ][ DC-DC ][ DC-AC ][ Wireless power ][ Solar Micro-inverters ][ LED lighting ][ TV SMPS ][ Server ][ Telecom ] |
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Datasheet |
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Please see the document for details |
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QFN |
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English Chinese Chinese and English Japanese |
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Apr. 11, 2022 |
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Rev Apr. 11, 2022 |
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1.4 MB |
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