The New-generation P-channel SGT MOSFET from JieJie Microelectronics with Advanced PDFN Package
JieJie Microelectronics hereby launches a new generation of 100V P-channel SGT MOSFET, which improves FOM performance by 20% compared with the previous generation design, having been considered world-leading. The advanced PDFN3x3-8L and PDFN5x6-8L low profile packages boast 64% and 48% smaller area and 45% and 55% lower height than traditional SOP-8L and DPAK packages, thus being ideal for compact terminal design. Moreover, the low stress and 0.275mm length of the PDFN5x6-8L pins remarkably improve the solder joint yield of automatically optically inspected PCB assembly (PCBA), further ensuring stable operation and long-term reliability of terminals.
The drive circuit of the 100V P-channel MOSFET is simpler than that of the N-channel MOSFET; hence, the former meets the constantly increasing requirements for long-term stable operation of systems, narrow application spaces, and reduced critical failure points of circuits in such applications as "high-end loads, anti-reverse connection circuits, battery reverse protection, B/BLDC motor drive, and high-side switches for DC-DC step-down conversion" in sectors of high-performance computing (HPC), Industry 5.0 (IE), and the aftermarket of automotive electronics (Autonomous Driving System, ADS).
The performance of the new-generation P-channel JPFET® is considered to be cutting-edge all over the world, and its key electrical parameters such as RDS(ON)_Typ and FOM are superior to like products of international first-line semiconductor IDMs. JMPL1050AU is available in a thin and small PDFN3x3-8L package, and the RDS(ON)_Typ and FOM measurements of the device are as low as 38mΩ/760 when VGS=10V, thus being at the international leading level. Furthermore, the top-ranking linear model/safe operation area (SOA) feature enables devices to function in a safe and reliable manner even in the operating state of high current. The extremely low on-resistance helps improve operational efficiency, reduce system cost, and extend the service life of devices.
Fan Jun, Marketing Director of Power MOSFET at JieJie Microelectronics: "The new-generation P-channel JPFET® series, available in both plug-in and new SMD high-quality packages, is ideal for customer applications at operating voltages between 40V and 72V. In DC-DC step-down conversion with a duty cycle of less than 30%, JMPL1050AU should be one of the best choices in the industry in terms of high energy conversion efficiency, simple drive circuits, PCBA, and long-term safety and reliability. JieJie Microelectronics will continue to develop P-channel SGT MOSFETs with superior performance in a variety of voltage endurance ranges to meet the demand for power devices in new energy, high-performance computing, automotive electronics, and other terminal applications."
The new-generation P-channel JPFET is in mass production.
- 【Datasheet】JMPL1050AP -100V 39mΩ P-Ch Power MOSFET
- 【Datasheet】JMPL1050AG -100V 36mΩ P-Ch Power MOSFET
- 【Datasheet】JMPL1050AU -100V 38mΩ P-Ch Power MOSFET
- 【Datasheet】JMPL1050AK -100V 37mΩ P-Ch Power MOSFET
- 【Datasheet】JMPL1050AG -100V 36mΩ P-Ch Power MOSFET
- 【Datasheet】JMPL1050AU -100V 38mΩ P-Ch Power MOSFET
- 【Datasheet】JMPL1050AY -100V 40mΩ P-Ch Power MOSFET
- 【Datasheet】JMPL1050AY -100V 40mΩ P-Ch Power MOSFET
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