INN100W032A 100V Enhancement-mode GaN Power Transistor Datasheet
■GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in Solder Bar WLCSP with 3.5 mm x 2.13 mm package size.
●Features
■GaN-on-Silicon E-mode HEMT technology
■Very low gate charge
■Ultra-low on resistance
■Very small package size
■Zero reverse recovery charge
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Enhancement-mode GaN Power Transistor 、 GaN-on-Silicon enhancement mode high-electron-mobility-transistor 、 HEMT |
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[ Synchronous rectification ][ Class-D audio ][ High frequency DC-DC converter ][ Communication base station ][ Motor driver ] |
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Datasheet |
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Please see the document for details |
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WLCSP |
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English Chinese Chinese and English Japanese |
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2022/08/09 |
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Rev. 1.0 |
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2.3 MB |
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