BSS123K N-Channel Enhancement Mode Power MOSFET

2021-06-10
●General Features:
■V-DS = 100 V,I-D = 0.17A
■R-DS(ON) < 7.2Ω @ V-GS=10V
■R-DS(ON) < 8Ω @ V-GS=4.5V
■High power and current handing capability
■Lead free product is acquired
■Surface mount package
■ESD 2KV HBM

NCE

BSS123K

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N-Channel Enhancement Mode Power MOSFET

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Direct logic-level interface ]TTL/CMOS ]Drivers ]relays ]solenoids ]lamps ]hammers ]display ]memories ]transistors ]Battery operated systems ]Solid-state relays ]

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Datasheet

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Please see the document for details

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SOT-23

English Chinese Chinese and English Japanese

2021/05/21

v1.0

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