BSS123K 100V N-Channel MOSFET

PublishTime：2024-06-19

●General Description ■ These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. ●Features ■ Advanced trench cell design ■ High speed switch ■ ESD Protected, HBM ≥ 2 kV

Brand of Product：	SUMSEMI
Part#：	BSS123K More Part#
Product Category：	N-Channel MOSFET、N-Channel enhancement mode power field effect transistors More
Application：	[ Portable appliances ][ Load switch appliances ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	SOT-23
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2021/7/19
Version Number：	V 1.0
Data Encoding：
Data Size：	484 KB

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