BSS123K N-Channel Enhancement Mode Field Effect Transistor
●Features
■Halogen free available upon request by adding suffix "-HF"
■High dense cell design for extremely low RDS(ON)
■High speed switch
■Epoxy meets UL 94 V-0 flammability rating
■Moisture Sensitivity Level 1
|
|
Datasheet |
|
|
|
Please see the document for details |
|
|
|
|
|
SOT-23 |
|
English Chinese Chinese and English Japanese |
|
2018/01/08 |
|
Revision: A |
|
|
|
574 KB |
- +1 Like
- Add to Favorites
Recommend
- Rogers‘ Micro Channel Coolers (MCC) in High Performance Computing (HPC) Applications
- Air Cooled VCSEL Applications with Rogers Micro-Channel-Coolers (MCC)
- PN Junction SiC&GaN Power Devices Have Reached the WW First-class Level,Will Set Up European & North American Sales Team to Provide Global Services
- What is FET Features?
- The Cause of Serious Heat in the FET
- EPC Announces EPC9193 eGaN® FET Based 3-Phase BLDC Motor Drive Inverter for Low-Cost E-Bikes, Drones and Robotics
- Design Higher Power Density USB-C PD Applications with New 50V GaN FET in Tiny 1.8mm² Footprint from EPC
- How To Use An EPC Development Board to Evaluate The Performance of A Given GaN FET or IC in Common Applications?
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.