PN Junction SiC＆GaN Power Devices Have Reached the WW First-class Level，Will Set Up European ＆ North American Sales Team to Provide Global Services
Earlier, there were media reports that the Chinese SiC & GaN power device supplier PN Junction Semiconductor and MCC had reached a strategic cooperation, which was suspected to be provide global service. Today, PN Junction Semiconductor announced that it will cooperate with Foxy Power in Germany to form a European & North American sales team.
Johnny Kao, VP of Marketing & Sales of PN Junction Semiconductor, said: "In the past three years, PN Junction Semiconductor has devoted herself to research and design, and has released more than 50 wide range of 650V/1200V/1700V SiC SBD, 650V, 1200V, 1700V, 750V SiC MOS, 650V GaN HEMT, which have been tested and verified by testing agency & global customers. PN Junction Semiconductor’s products performance has reached the WW first-class level. Our cooperation with MCC also shows that PN Junction Semiconductor’s products have been recognized in the global market. We strive to become The Chinese SiC & GaN brand with the largest share in the global market."
PN Junction Semiconductor is a wide bandgap semiconductor power device design and solution provider established in September 2018. It is currently one of the main members of the International Standards Committee JC-70 meeting and participated in the development of wide bandgap semiconductor power devices. standard. Its founder Dr. Xing Huang graduated from North Carolina State University, while studied with Dr. B. Jayant Baliga, IEEE Life Fellow Inventor of IGBT and Dr. Alex Q. Huang (IEEE Fellow) ,the inventor of emitter turn-off thyristor (ETO). Dr. Xing Huang also has more than ten years of experience in SiC & GaN power device design in Cree / RFMD (Qorvo) / USCi, etc. He has published 10 scientific papers and more than 20 patented inventions.
With advanced technology in SiC & GaN power device design, PN Junction Semiconductor released the first compatible drive 650V GaN power device within only 6 months of its establishment in March 2019. In August of the same year, 1200V SiC MOS with Gen3 technology was completed, filling the Chinese gap. In 2020, 650V and 1700V industrial-grade MOS for 5G data centers, servers and industrial auxiliary power supplies and 650V automotive-grade MOS for on-board chargers were released successively. In February 2021, 1200V high-current automotive-grade MOS was released for use in electric vehicle electric drive monotubes and modules.
In order to ensure capacity and quality, PN Junction Semiconductor's SiC wafers are produced by X-FAB, one of the first foundry to provide 150mm SiC manufactory technology, whom is the global top 3 SiC foundry with large-scale mass production capabilities WW.
High temperature resistance, high frequency, high power, high voltage and other characteristics make SiC devices play an important role in many fields such as rail transit, power grids, photovoltaic inverters, new energy vehicles, and charging piles. And GaN technology is expected to greatly improve applications such as power management, power generation and power output. “As a new star of wide bandgap semiconductor power devices, I believe PN Junction Semiconductor will do its best to serve customers all over the world with its WW leading SiC design technology.” said by Johnny Kao.
A strategic partnership established between worldwide Leading foundry X-FAB and a new Chinese SiC rising star - PN Junction Semiconductor
A few days ago, X-FAB Silicon Foundries, the leading foundry for analog/mixed-signal and specialty semiconductor solutions, and the Chinese SiC power device supplier PN Junction Semiconductor announced that they have established a strategic partnership for the manufacturing of SiC wafers and have been cooperating for nearly three years.
X-FAB, headquartered in Europe, is the world’s first foundry to provide leading 150 mm SiC manufacturing technology that supports customers in creating their own devices in high quality, with high performance and in fast-time-to-market projects in a fully automotive-qualified fab environment.
As one of the most important SiC wafer partners in Asia market, Shipments of SiC SBD&SiC MOSFET in PN Junction Semiconductor topped 10 million units in the past 2 years, and it is expected to exceed 80 million in the next 3 years.
PN Junction Semiconductor focuses on SiC and GaN power devices, including super-fast rectifiers (Schottky diodes) and switches (MOSFETs and HEMTs). It was established in September 2018 by Dr. Xing Huang who studied with B. Jayant Baliga, IEEE Life Fellow Inventor of IGBT. Dr. Xing Huang also has 10+ years’ experience in SiC and GaN power devices, while worked with Cree / RFMD(Qorvo) / USCi etc. PN Junction Semiconductor’s products has the international first-class level which can see from PN Junction Semiconductor’s product roadmap.
In March 2019, PN Junction Semiconductor released the first compatible drive 650V GaN power device within only 6 months of its establishment. In August of the same year, 1200V SiC MOS with Gen3 technology was completed. In 2020, 650V & 1700V industrial-grade MOS for 5G data centers, servers and industrial auxiliary power supplies and 650V automotive MOS for on-board chargers were released successively. In February 2021, 1200V high-current automotive MOS was released for using in vehicle electric drive monotubes and modules. So far, PN Junction Semiconductor has released more than 10 wide range of SiC MOSFET, 650V/1200V/1700V SiC SBD, SiC MOS, GaN HEMT power device.
PN Junction Semiconductor and X-FAB state that they will continue to cooperate on the SiC manufacturing business. PN Junction Semiconductor's world-leading SiC design technology combined with the highly scalable, automotive qualified X-FAB foundry services will pave the road to efficient, cost effective high-volume SiC applications such as data centers, supercomputing and blockchain, 5G base stations, vehicles/energy storage/charging piles, micro photovoltaics, inter-city high-speed railways and inter-city rail transit, consumer appliances, UHV, aerospace , Industrial special power supply, UPS, motor drive and other.
- +1 Like
- Add to Favorites
Recommend
- Innoscience Demonstrates GaN Leadership at International Symposium on Power Semiconductor Devices (ISPSD) with Two Key Papers
- The Power and Evolution of GaN: Bringing Precision Control to Surgical Robots with eGaN FETs and IC
- EPC Releases Phase 14 Report on GaN Reliability and the Use of Physics-Based Models to Project eGaN Device Lifetime
- New Customized GaN Test Board for Dynamic Power Device Analyzer/ Double-Pulse Tester
- EPC Space Brings GaN to the Edge of the Atmospherem, and Rohm Hones In on GaN Miniaturization
- EPC Introduces 100V eGaN Power Transistor for High Power Density Power Conversion and Lidar Applications
- GaN Devices for Smaller, Lighter, Smoother Motor Drives
- PN Junction P3M06040K3 SiC MOS N-Channel Enhancement Mode，High Blocking Voltage with Low On-Resistance
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
