PN Junction P3M06040K3 SiC MOS N-Channel Enhancement Mode，High Blocking Voltage with Low On-Resistance
PN Junction P3M06040K3 SiC MOS N-Channel Enhancement Mode.Thermal Resistance from Junction to Case RθJC 0.59 °C/W; Wide range of applications: Solar Inverters, EV Battery Chargers, High Voltage DC/DC Converters, etc.
Fig.1
Features
• Qualified to AEC-Q101
• High Blocking Voltage with Low On-Resistance
• High-Frequency Operation
• Ultra-Small Qgd
• 100% UIS tested
Benefits
• Improve System Efficiency
• Increase Power Density
• Reduce Heat Sink Requirements
• Reduction of System Cost
Maximum Ratings
Table.1
Applications
• Solar Inverters
• EV Battery Chargers
• High Voltage DC/DC Converters
• Switch Mode Power Supplies
Order Information
Table.2
- 【Datasheet】P3M06040K3 N-Channel Enhancement Mode SiC MOS
- 【Datasheet】P3M06040K3 SiC MOS N-Channel Enhancement Mode
- 【Datasheet】P3M06040K3 SiC MOS N-Channel Enhancement Mode
- 【Datasheet】P3M06040K3 SiC MOS N-Channel Enhancement Mode
- 【Datasheet】P3M06040K3 SiC MOS N-Channel Enhancement Mode
- 【Datasheet】P3M06040K3 SiC MOS N-Channel Enhancement Mode
- 【Datasheet】P3M06040K3 SiC MOS N-Channel Enhancement Mode
- 【Datasheet】SiC MOS P3M06040K3 N-Channel Enhancement Mode
- 【Datasheet】P3M06040K3 SiC MOS N-Channel Enhancement Mode
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