SiC Schottky Compared to Normal Schottky Diode
The common Schottky diode, known as the silicon Schottky diode, is a metal-to-semiconductor diode such as MBR2045CT, MBR20100CT, and so on. It has the following advantages (or characteristics) :
1. One of the advantages of silicon Schottky diode over PN junction devices is the low forward conduction voltage and low conduction loss.
2. Another important performance Schottky diode is its low reverse recovery time (TRR) of 0.01 microseconds
3. The Silicon Schottky diode behaves more like an ideal switch than PN junction devices. However, the Silicon Schottky diode also has two disadvantages, one is the low reverse voltage VR, generally only about 100V, and the other is the large reverse leakage current IR.
As mentioned above, the Silicon Schottky diode has low reverse voltage, around 250V. For the ability to withstand 500-600V reverse voltage requirements, people began to use silicon carbide (SiC) manufacturing devices, because it can withstand higher voltage.
What is a SiC Schottky diode?
Silicon carbide (SiC) is a Schottky diode Schottky diode that replaces silicon (Si) with SIC. It can withstand high voltages. Here are two Schottky comparisons:
Table.1
As can be seen from the table above, the other parameters of silicon carbide Schottky are not as good as ordinary Schottky except that it can withstand high voltage, furthermore, silicon carbide Schottky has not been used to replace silicon power devices except for performance requirements due to the high cost of SiC devices (3-5 times that of similar silicon devices).
The development of silicon carbide materials has made it possible for some silicon carbide power devices to be used in practice. However there are still many key technical issues to be resolved.
It is too early to say whether it will be put into commercial use on a large scale. Our business can communicate with customers or recommend MBR20200CT like ordinary Schottky!
- +1 Like
- Add to Favorites
Recommend
- LXMICRO Fast Recovery Diode MUR1640CT with a Average Rectified Forward Current IF of 16A and Current IFSM of 125A
- How Does LXMICRO Detect Schottky Diode Quickly and Accurately?
- Low Voltage Drop High Junction Temperature Schottky Diode HBT20L200DC from LXMICRO Adopts TO-263 Packaging
- LXMICRO‘s High-Power Schottky Diode MBR30100 Widely Used in Power, Adapter, Automotive Electronics and Consumer Electronics
- LXMICRO‘s Low Forward Low Voltage Drop Schottky Diode SBT1045 with 45V VRRM and 275VF IFSM
- Nomenclature for the Schottky Diode MBR Family
- 20A Schottky Diode Model and Package
- Lingxun Micro Participates in the Chongqing Semiconductor and Electronic Technology (Chongqing) Expo in 2024
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
