PNDM12P242A1: Dynamic Characteristic Evaluation Board for PNJ′s SiC MOSFET in TO-247-3/-4 Package
●This document is prepared as an application note of how to evaluate the dynamic characteristic for PN Junction Semiconductor（PNJ）′s 1200V/650V SiC MOSFET in TO-247-3/-4 package. The reference board is available for designers to carry out double pulse test of PNJ′s SiC MOSFET or driver circuit design based on PNJ′s SiC MOSFET.
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PNDM12P242A1 、 PNDM12P242A1_M 、 PNDM12P242A1_D2 、 PNDM12P242A1_D1 、 P3M12080K3 、 P3M12080K4 、 P3M06040K3 、 P3M06040K4 |
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Application note & Design Guide |
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Please see the document for details |
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TO247-3;TO247-4 |
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English Chinese Chinese and English Japanese |
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Sep. 2021 |
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Ver. 1.1 |
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2.5 MB |
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