A Strategic Partnership Established between Worldwide Leading Foundry X-FAB and A New Chinese SiC Rising Star - PN Junction Semiconductor
A few days ago, X-FAB Silicon Foundries, the leading foundry for analog/mixed-signal and specialty semiconductor solutions, and the Chinese SiC power device supplier PN Junction Semiconductor announced that they have established a strategic partnership for the manufacturing of SiC wafers and have been cooperating for nearly three years.
X-FAB, headquartered in Europe, is the world’s first foundry to provide leading 150 mm SiC manufacturing technology that supports customers in creating their own devices in high quality, with high performance and in fast-time-to-market projects in a fully automotive-qualified fab environment.
As one of the most important SiC wafer partners in Asia market, Shipments of SiC SBD&SIC MOSFET in PN Junction Semiconductor topped 10 million units in the past 2 years, and it is expected to exceed 80 million in the next 3 years.
PN Junction Semiconductor focuses on SiC and GaN power devices, including super-fast rectifiers (Schottky diodes) and switches (MOSFETs and HEMTs). It was established in September 2018 by Dr. Xing Huang who studied with B. Jayant Baliga, IEEE Life Fellow Inventor of IGBT. Dr. Xing Huang also has 10+ years’ experience in SiC and GaN power devices, while worked with Cree / RFMD(Qorvo) / USCi etc. PN Junction Semiconductor’s products has the international first-class level which can see from PN Junction Semiconductor’s product roadmap.
In March 2019, PN Junction Semiconductor released the first compatible drive 650V GaN power device within only 6 months of its establishment. In August of the same year, 1200V SiC MOS with Gen3 technology was completed. In 2020, 650V & 1700V industrial-grade MOS for 5G data centers, servers and industrial auxiliary power supplies and 650V automotive MOS for on-board chargers were released successively. In February 2021, 1200V high-current automotive MOS was released for using in vehicle electric drive monotubes and modules. So far, PN Junction Semiconductor has released more than 10 wide range of SiC MOSFET, 650V/1200V/1700V SiC SBD, SiC MOS, GaN HEMT power device.
PN Junction Semiconductor and X-FAB state that they will continue to cooperate on the SiC manufacturing business. PN Junction Semiconductor's world-leading SiC design technology combined with the highly scalable, automotive qualified X-FAB foundry services will pave the road to efficient, cost effective high-volume SiC applications such as data centers, supercomputing and blockchain, 5G base stations, vehicles/energy storage/charging piles, micro photovoltaics, inter-city high-speed railways and inter-city rail transit, consumer appliances, UHV, aerospace , Industrial special power supply, UPS, motor drive and other.
- +1 Like
- Add to Favorites
Recommend
- II-VI Incorporated Expands SiC Manufacturing Footprint for Power Electronics in EVs and Clean Energy
- SiC can Be Extremely Fast
- Vincotech’s 70A flowPACK 1 SiC Modules Featuring Ultra-fast 900V SiC MOSFET for up to 400kHz switching frequency
- What is SiC and why is SiC for power devices?
- New Flow E SiC MOSFET-based Modules Can Extend The Power Cycling Lifetime by A Factor of 2 | Vincotech
- The Encyclopedia of SiC丨SiC Crystal
- ROHM Acquires SBT1.5℃ Certification for Greenhouse Gas Emission Reduction Targets
- PN Junction P3M06040K3 SiC MOS N-Channel Enhancement Mode，High Blocking Voltage with Low On-Resistance
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
