SiC EPITAXIAL WAFERS
●We offer a complete SiC materials solution with flexible specifications with the following capabilities:
■High quality and uniformity, low defects, high device yield
■ Epilayers with or without buffer; low-doped layers of up to 250 μm
■ Multilayer structures, various doping levels, including p-n junctions
■ Embedded/buried structures and contact layers
●COMPLETE RANGE OF SiC EPITAXY
■From R&D to volume production
■Flexible specification
■Multi-layer structures
■Epitaxially grown pn-junctions
■Regrowth Epi
■Thick Epi
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2023/8/24 |
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