Enhancement Mode GaN (eGaN® FETs) for Coil Detuning
●Purpose: Coil detuning in RF coils is necessary for patient safety and RF field homogeneity. Decoupling is typically achieved using PIN diodes, which function as switches to permit or restrict the flow of RF current on coil elements. However, a major drawback to PIN diodes is that they require large DC bias current in order to achieve a conducting state1. DC bias current on a coil presents a potential problem due to the resulting static B0 inhomogeneity and power dissipation, which may be especially problematic in dense receive arrays. In this work we demonstrate the use of Enhancement-Mode Gallium Nitride FETs (eGaN FETs) from Efficient Power Conversion Corporation as a replacement for PIN diodes in active detuning circuits. The performance of eGaN FETs allows for effective RF switches without the need for large DC bias currents, thus eliminating B0inhomogeneity and static dissipation from the switch.
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Technical Documentation |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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May 2014 |
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259 KB |
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