POWER GaN GaN - Moving Quickly into Entirely New Markets
●Callium Nitride (GaN) based power devices are rapidly being adopted due to their ability to operate at frequencies and switching speeds beyond the capability of Silicon power devices. With discrete GaN devices capable of switching at slew rates up to 70 V/ns, the system performance is greatly impacted by aspects outside the active power devices, such as high speed gate drivers and printed circuit board layout. In this article, the latest family of high frequency enhancement mode Gallium Nitride power transistors (eGaN FETs) is presented for use in multi megahertz buck converters. These devices were designed to address high-frequency hard-switching power applications at higher voltages. Alex Lidow, Johan Strydom and David Reusch, Efficient Power Conversion (EPC), EI Segundo, USA
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Technical Documentation |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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June 2014 |
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1.3 MB |
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