RX65T080PS3H - 650V GaN Power Transistor (FET)

2025-03-16
该文档详细介绍了RX65T080PS3H型号的650V GaN功率晶体管(FET)的特性、应用、封装、电气参数、热阻、典型特性曲线、电路实现、设计考虑因素、封装轮廓和修订历史。该晶体管易于使用,与标准栅极驱动器兼容,具有优异的QG x RDS(on)品质因数(FOM),低QRR,无需自由轮换二极管,低开关损耗,符合RoHS标准且无卤素。

润新微电子

RX65T080PS3H

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Part#

GaN功率晶体管 (FET)

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高效电源 ]电信和数据通信 ]汽车 ]伺服电机 ]

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Datasheet

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Please see the document for details

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3引脚TO-220

English Chinese Chinese and English Japanese

2024-01-30

Rev. 0.3

Doc: 0.3

2.7 MB

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