XG65T125BS1A 650V GaN Power Transistor (FET)

PublishTime：2025-03-16

XG65T125BS1A是一款650V的氮化镓功率晶体管（FET），具有以下特点：易于使用，与标准栅极驱动器兼容；低Qrr，无需自由轮换二极管；优异的Qg x RDS(on)产品（FOM）；低开关损耗；符合RoHS标准和无卤素。适用于电源适配器、电信和数据通信、汽车、伺服电机等领域。采用TO-263-3L封装。

Brand of Product：	润新微电子
Part#：	XG65T125BS1A More Part#
Product Category：	氮化镓功率晶体管 (FET) More
Application：	[ 电源适配器 ][ 电信和数据通信 ][ 汽车 ][ 伺服电机 ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-263-3L
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2020-5-8
Version Number：	1.0
Data Encoding：	Doc1
Data Size：	2 MB

Data section preview(2pages)

- The full preview is over. If you want to read the whole 9 page document,please Sign in/Register -

Download

+1 Like
Add to Favorites

Recommend

Technical Resources

More>

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Integrated Circuits