30V/395A N-Channel Super Trench II Power MOSFET NCEP008N30GU with the Most Efficient High Frequency Switching Performance
The NCEP008N30GU N-Channel Super Trench II Power MOSFET uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
General Features
VDS=30V, ID=395A
RDS(ON)=0.55mΩ (typical)@VGS=10V
RDS(ON)=0.80mΩ (typical)@VGS=4.5V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150°C operating temperature
Pb-free lead plating
100% UIS TESTED!
100% ΔVds TESTED!
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous rectification
Absolute Maximum Ratings (TC=25℃ unless otherwise noted)
Thermal Characteristic
Electrical Characteristics (TC=25℃ unless otherwise noted)
Notes:
1. EAS condition : Tj=25℃, VDD=15V,VG=10V, L=0.5mH, Rg=25Ω
2. Guaranteed by design, not subject to production
3. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150℃. The SOA curve provides a single pulse rating.
Package Marking and Ordering Information
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