NCE30P60G NCE P-Channel Enhancement Mode Power MOSFET
The NCE30P60G uses advanced trench technology and design to provide excellent R-DS(ON) with low gate charge. It can be used in a wide variety of applications.
■General Features
●V-DS =-30V,I-D =-60A
▲R-DS(ON) < 6mΩ @ V-GS=-10V
▲R-DS(ON) < 8mΩ @ V-GS=-4.5V
●High density cell design for ultra low R-ds on
●Fully characterized avalanche voltage and current
●Good stability and uniformity with high E-AS
●Excellent package for good heat dissipation
●Special process technology for high ESD capability
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Datasheet |
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Please see the document for details |
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DFN 5x6 EP |
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English Chinese Chinese and English Japanese |
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2019/08/09 |
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v1.0 |
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535 KB |
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