NCEP40ND20QW NCE Dual N-Channel Super Trench Power MOSFET

PublishTime：2022-09-22

The NCEP40ND20QW uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R-DS(ON) and Q-g. This device is ideal for high-frequency switching and synchronous rectification.
■General Features
●V-DS =40V,I-D =20A
▲R-DS(ON)=7.05mΩ ( typical )V-GS=10V
▲R-DS(ON)=9.9mΩ ( typical )V-GS=4.5V
●Excellent gate charge x R-DS(on) product(FOM)
●Very low on-resistance R-DS(on)
●150 °C operating temperature
●Pb-free lead plating

Brand of Product：	NCE
Part#：	NCEP40ND20QW More Part#
Product Category：	Dual N-Channel Super Trench Power MOSFET More
Application：	More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	DFN3X3-8L
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2020/03/24
Version Number：	V1.0
Data Encoding：
Data Size：	562 KB

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