40V/170A N-Channel Super Trench Power MOSFET NCEP40T17AG Ideal for High-frequency Switching and Synchronous Rectification
NCE NCEP40T17AG N-Channel Super Trench Power MOSFET uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
General Features
● VDS=40V, ID=170A
RDS(ON)=1.4mΩ (typical) @VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150℃ operating temperature
● Pb-free lead plating
● 100% UIS tested
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification
Absolute Maximum Ratings (TC=25℃ unless otherwise noted)
Electrical Characteristics (TC=25°C unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t≤10 sec.
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω
Package Marking and Ordering Information
- +1 Like
- Add to Favorites
Recommend
- 650V/107A N-Channel Super Junction Power MOSFET NCE60NF019T Provided a Ultra-low RDS(ON) and Low Gate Charge
- 30V/40A N-Channel Super Trench Power MOSFET NCEP3040Q, Providing the Most Efficient High Frequency Switching Performance
- 60V/315A Automotive N-Channel Super Trench II Power MOSFET NCEAP016N60VD with AEC-Q101 qualified
- 30V/395A N-Channel Super Trench II Power MOSFET NCEP008N30GU with the Most Efficient High Frequency Switching Performance
- 150V/180A N-Channel Super Trench Power MOSFET NCEP15T18T with An Extremely Low Combination of RDS(ON) and Qg
- 150V/100A N-Channel Super Trench Power MOSFET NCEP15T10V, Providing An Extremely Low Combination of RDS(ON) and Qg
- 710V/96A N-Channel Super Junction Power MOSFET NCE65NF023T with Ultra-Low RDS(ON), Low Gate Charge and A Rapid Recovery Body Diode
- 65V/46A N-Channel Enhancement Mode Power MOSFETs VM6506, Use Trench DMOS Technology to Minimize On-State Resistance and Provide Superior Switching Performance
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.