65V/46A N-Channel Enhancement Mode Power MOSFETs VM6506, Use Trench DMOS Technology to Minimize On-State Resistance and Provide Superior Switching Performance
These N-Channel enhancement mode power field effect transistors VM6506 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These N-Channel MOSFETs devices are well suited for high efficiency fast switching applications.
Features
65V,46A, RDS(ON)=8.3mΩ@VGS=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
Motor Drive
Power Tools
LED Lighting
Quick Charger
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Thermal Characteristics
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Note :
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=30A,RG=25Ω,Starting TJ=25℃.
3. The data tested by pulsed, pulse width ≦300μs, duty cycle ≦2%.
4. Essentially independent of operating temperature.
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