100V/55A N-Channel MOSFETs VM9002, Using Trench DMOS Technology to Minimize On-state Resistance and Provide Superior Switching Performance
These N-Channel enhancement mode power field effect transistors VM9002 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Features
100V, 55A, RDS(ON)=11.8mΩ@VGS=10V
Improved dv/dt capability
Fast switching
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Applications
Networking
Load Switch
LED applications
Quick Charger
Absolute Maximum Ratings (Tc=25 ℃ unless otherwise noted)
Thermal Characteristics
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=50V,VGS=10V,L=0.1mH,IAS=50A,RG=25Ω,Starting TJ=25℃.
3. The data tested by pulsed , pulse width≦300μs , duty cycle≦2%.
4. Essentially independent of operating temperature.
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