80V/75A N-Channel MOSFETs VM8002 Using Trench DMOS Technology to Minimize On-state Resistance
These N-Channel enhancement mode power field effect transistors VM8002 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
N-Channel MOSFETs VM8002 Features
80V,75A, RDS(ON)=7mΩ@VGS=10V
Improved dv/dt capability
Fast switching
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Applications
Motor Drive
Power Tools
LED Lighting
Absolute Maximum Ratings(Tc=25℃ unless otherwise noted)
Thermal Characteristics
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Note :
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=50A,RG=25Ω,Starting TJ=25℃.
3. The data tested by pulsed, pulse width ≦ 300μs, duty cycle ≦ 2%.
4. Essentially independent of operating temperature.
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