50A/65V N-Channel MOSFETs VM6505 Uses Trench DMOS Technology and has Superior Switching Performance
These N-Channel enhancement mode power field effect transistors VM6505 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These N-Channel MOSFETs are well suited for high efficiency fast switching applications.
Features
65V,50A, RDS(ON)=9mΩ@VGS=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green Device Available
Applications
Networking
Load Switch
LED applications
Absolute Maximum Ratings (Tc=25℃ unless otherwise noted)
Thermal Characteristics
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Note :
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=38A,RG=25Ω,Starting TJ=25℃.
3. The data tested by pulsed, pulse width ≦ 300μs, duty cycle ≦ 2%.
4. Essentially independent of operating temperature.
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