65V/120A N-Channel Enhancement Mode Power MOSFETs VM6503 with Improved dv/dt Capability and Fast Switching Performance
These N-Channel enhancement mode power field effect transistors VM6503 are using trench DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These N-Channel MOSFETs devices are well suited for high efficiency fast switching applications.
Features
65V,120A, RDS(ON)=3.5mΩ@VGS=10V
Improved dv/dt capability
Fast switching
Green Device Available
Applications
Networking
Load Switch
LED applications
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Thermal Characteristics
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=66A,RG=25Ω,Starting TJ=25℃.
3. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦2%.
4. Essentially independent of operating temperature.
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