65V/95A N-Channel MOSFETs VM6502, Improved dv/dt Capability, Suitable for Networking and Load Switch
These N-Channel enhancement mode power field effect transistors VM6502 are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Features
65V,95A, RDS(ON)=4.4mΩ@VGS=10V
Improved dv/dt capability
Fast switching
Green Device Available
Applications
Networking
Load Switch
LED applications
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Thermal Characteristics
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Note :
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=55A,RG=25Ω,Starting TJ=25℃.
3. The data tested by pulsed , pulse width≦300μs , duty cycle≦2%.
4. Essentially independent of operating temperature.
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