30V/40A N-Channel Super Trench Power MOSFET NCEP3040Q, Providing the Most Efficient High Frequency Switching Performance

2023-11-08 NCE
N-Channel Super Trench Power MOSFET,Power MOSFET,NCEP3040Q,NCE

The NCEP3040Q uses Super Trench technology that is uniquely optimized to provide the most efficient high-frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.



General Features
● VDS=30V,ID=40A
RDS(ON)=6.8mΩ (typical) @VGS=10V
RDS(ON)=9.5mΩ (typical) @VGS=4.5V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150°C operating temperature
● Pb-free lead plating
● 100% UIS tested

● 100% ∆Vds tested


Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification


Absolute Maximum Ratings (TC=25℃ unless otherwise noted)

Thermal Characteristic

Electrical Characteristics (TC=25℃ unless otherwise noted)

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t≤10sec.
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω


Package Marking and Ordering Information

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