150V/100A N-Channel Super Trench Power MOSFET NCEP15T10V, Providing An Extremely Low Combination of RDS(ON) and Qg
The NCEP15T10V N-Channel Super Trench Power MOSFET uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
General Features
VDS=150V, ID=100A, RDS(ON)=5.7mΩ (typical) @VGS=10V
Excellent gate charge x RDS(on) product(FOM)
Very low on-resistance RDS(on)
150°C operating temperature
Pb-free lead plating
100% UIS TESTED
100% ΔVds TESTED
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous rectification
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Thermal Characteristic
Electrical Characteristics (TC=25℃ unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t≤10 sec.
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω
Package Marking and Ordering Information
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